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BFR 193
NPN Silicon RF Transistor * For low noise, high-gain amplifiers up to 2GHz * For linear broadband amplifiers * fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 193 RCs Q62702-F1218 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 140 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS 69 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V A 100 nA 100 A 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 193
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.68 0.24 1.8 -
GHz pF 1 dB 1.3 2.1 -
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 12.5 7 14.5 9 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-11-1996
BFR 193
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 24 1.935 3.8742 0.94371 1.8368 1.1824 18.828 0.96893 1.1828 1.0037 0 3 V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
125 0.26949 14.267 1 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063
A V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.95341 10.627 1.4289 0.91763 0.11938 0.48654 0.8 935.03 0.75 1.11 300
fA mA V fF V eV K
0.037925 A
0.037409 fA
0.053563 -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.43 73 84 165 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
BFR 193
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
600 mW 500
Ptot}
450 400 350 300 250 200 150 100 50 0 0 20 40 60 80
TS
TA
100
120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 3
K/W
-
RthJS
10 2
P totmax/PtotDC
10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
5
Dec-11-1996
BFR 193
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.3 pF
9 GHz
1.1
Ccb
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2
fT
7 6 5 4 3 2 1
8V 5V 3V
2V
1V 0.7V
0.1 0.0 0 4 8 12 16 V VR 22 0 0 10 20 30 40 50 60 70 mA 85 IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
16
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
10
dB
G
dB
8V 3V
8V
G
8 3V
12
7 2V 6
2V
10
5
8
1V
4
1V
3 6 0 10 20 30 40 50 60 0.7V 70 mA 85 IC 2 0 10 20 30 40 50 60 0.7V 70 mA 85 IC
Semiconductor Group
6
Dec-11-1996
BFR 193
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
16
VCE = Parameter, f = 900MHz
38
IC=30mA
dB 0.9GHz
dBm 34 0.9GHz 8V
G
12
IP3
32 30 28 3V 26 5V
10 1.8GHz 24 8 1.8GHz 6 22 20 18 4 2 0 1 2 3 4 5 6 7 8 V 10 16 14 12 0 10 20 30 40 50 1V 2V
60
70
V CE
80 mA 100 IC
Power Gain Gma, Gms = f(f)
VCE = Parameter
32
Power Gain |S21|2= f(f)
VCE = Parameter
30
IC=30mA
dB dB
IC=30mA
G
24
S21
22
20
18
16
14
12
10
8 10V 1V 0.7V
6 10V 2 -2 0.0 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5
4 0 0.0
0.5
1.0
1.5
2.0
2.5
GHz f
3.5
Semiconductor Group
7
Dec-11-1996

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